InInO2N

ceramic
· InInO2N

InInO2N is an experimental indium-based oxynitride ceramic compound that combines indium oxides with nitrogen incorporation, representing an emerging material within the broader family of metal oxynitrides. This material class is of significant research interest for photocatalytic and optoelectronic applications, where nitrogen doping of oxide semiconductors can modulate bandgap properties and enhance visible-light activity compared to conventional oxides. While not yet established in high-volume industrial production, indium oxynitrides are being investigated for water splitting, photocatalysis, and potentially semiconductor or thin-film device applications where light absorption and charge-carrier dynamics are critical.

photocatalytic applicationswater splitting catalystsvisible-light semiconductorsthin-film electronicsresearch-stage materials

Compliance & Regulations

?Conflict Free?RoHS?REACH?TSCA?Prop 65
PropertyValueUnitConditionsSource
Band Gap(Eg)
eV
Magnetic Moment(μB)
μB
Verified Unverified Low confidence (<80%) Link to source
PropertyValueUnitConditionsSource
Formation Energy(ΔHf)
eV/atom
Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.