InInO2N
ceramicInInO2N is an experimental indium-based oxynitride ceramic compound that combines indium oxides with nitrogen incorporation, representing an emerging material within the broader family of metal oxynitrides. This material class is of significant research interest for photocatalytic and optoelectronic applications, where nitrogen doping of oxide semiconductors can modulate bandgap properties and enhance visible-light activity compared to conventional oxides. While not yet established in high-volume industrial production, indium oxynitrides are being investigated for water splitting, photocatalysis, and potentially semiconductor or thin-film device applications where light absorption and charge-carrier dynamics are critical.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | — | eV | — | — | |
Magnetic Moment(μB) | — | μB | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | — | eV/atom | — | — |