InBi2Se4Br
semiconductor· InBi2Se4Br
InBi₂Se₄Br is an experimental mixed-halide bismuth selenide compound belonging to the family of layered chalcogenide semiconductors. This material is primarily of research interest for its potential as a topological insulator or narrow-bandgap semiconductor, with possible applications in quantum electronics and thermoelectric devices where the combination of bismuth, selenium, and bromine may offer tunable electronic properties unavailable in simpler binary compounds.
topological electronics (research)thermoelectric generationquantum device substratesinfrared optoelectronicsphotovoltaic absorber layersmaterials exploration for solid-state physics
Compliance & Regulations
?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | — | kg/m³ | — | — |
Verified Unverified Low confidence (<80%) Link to source
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | — | eV | — | — | |
| ↳ | — | eV | — | — | |
Magnetic Moment(μB) | — | µB | — | — |
N entriesMultiple entries per property — large groups are collapsed; click a summary row to expand. Use filters above to narrow by form / heat treatment / basis.
Verified Unverified Low confidence (<80%) Link to source
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | — | eV/atom | — | — | |
Formation Energy(ΔHf) | — | eV/atom | — | — |
Verified Unverified Low confidence (<80%) Link to source
Regulatory Screening
Environmental
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