InBi₂Se₄Br is an experimental mixed-halide bismuth selenide compound belonging to the family of layered chalcogenide semiconductors. This material is primarily of research interest for its potential as a topological insulator or narrow-bandgap semiconductor, with possible applications in quantum electronics and thermoelectric devices where the combination of bismuth, selenium, and bromine may offer tunable electronic properties unavailable in simpler binary compounds.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.2405 | lb/in³ | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 1.179 | eV | DFT · OptB88vdW | ||
| ↳ | 1.210 | eV | Measured | ||
High-Frequency Dielectric Constant (ε∞)(ε∞) | 14.15 | - | DFT · OptB88vdW | ||
Magnetic Moment(μB) | 0.000 | µB | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.00330 | eV/atom | DFT · OptB88vdW | ||
Formation Energy(ΔHf) | -0.4981 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data