InBi2Se4Br

semiconductor

· InBi2Se4Br

InBi₂Se₄Br is an experimental mixed-halide bismuth selenide compound belonging to the family of layered chalcogenide semiconductors. This material is primarily of research interest for its potential as a topological insulator or narrow-bandgap semiconductor, with possible applications in quantum electronics and thermoelectric devices where the combination of bismuth, selenium, and bromine may offer tunable electronic properties unavailable in simpler binary compounds.

topological electronics (research)thermoelectric generationquantum device substratesinfrared optoelectronicsphotovoltaic absorber layersmaterials exploration for solid-state physics

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Density(ρ)	0.2405	lb/in³	—

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Property	Value	Unit	Conditions
Band Gap(Eg)2 entries	1.210	eV	—
↳	1.179	eV	—
Magnetic Moment(μB)	0.000	µB	—

N entriesMultiple entries per property — large groups are collapsed; click a summary row to expand. Use filters above to narrow by form, heat treatment, basis, or test environment.

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Property	Value	Unit	Conditions	Source
Energy Above Hull(ΔEhull)	0.00330	eV/atom	—
Formation Energy(ΔHf)	-0.4981	eV/atom	—

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Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

InBi2Se4Br

Physical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control