In₄Bi₂S₉ is a quaternary chalcogenide ceramic compound belonging to the indium bismuth sulfide family, characterized by mixed-valence metal cations and sulfide anions in a layered crystal structure. This material is primarily of research and developmental interest for optoelectronic and thermoelectric applications, where its narrow bandgap and layered architecture offer potential advantages in light absorption, charge transport, and phonon scattering compared to binary or ternary sulfides. It represents an emerging class of multinary sulfide ceramics being explored for next-generation energy conversion and photovoltaic technologies.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 5.352 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.620 | eV | — | ||
Magnetic Moment(μB) | 0.000 | µB | — | ||
Seebeck Coefficient(S) | -158.1 | µV/K | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.000 | eV/atom | — | ||
Formation Energy(ΔHf) | -0.5608 | eV/atom | — |