In4Bi2S9 — Properties & Data | MatWorld

In4Bi2S9

ceramic

· JVASP-29238· In4Bi2S9

In₄Bi₂S₉ is a quaternary chalcogenide ceramic compound belonging to the indium bismuth sulfide family, characterized by mixed-valence metal cations and sulfide anions in a layered crystal structure. This material is primarily of research and developmental interest for optoelectronic and thermoelectric applications, where its narrow bandgap and layered architecture offer potential advantages in light absorption, charge transport, and phonon scattering compared to binary or ternary sulfides. It represents an emerging class of multinary sulfide ceramics being explored for next-generation energy conversion and photovoltaic technologies.

thermoelectric devicesphotovoltaic researchinfrared opticssolid-state electronicsexperimental semiconductorsenergy harvesting

Compliance & Regulations

?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Density(ρ)	0.1934	lb/in³	DFT · OptB88vdW

Verified Unverified Low confidence (<80%) Link to source

Filter by

Carrier

Property	Value	Unit	Conditions
Band Gap(Eg)	1.620	eV	DFT · OptB88vdW
High-Frequency Dielectric Constant (ε∞)(ε∞)	10.34	-	DFT · OptB88vdW
Electron Effective Mass(m*e)	1.850	me	DFT · OptB88vdW · 27°C
Hole Effective Mass(m*h)	2.893	me	DFT · OptB88vdW · 27°C
Magnetic Moment(μB)	0.000	µB	DFT · OptB88vdW
Thermoelectric Power Factor(PF)2 entries	0.000900	W/(m·K²)	DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C
↳	0.000572	W/(m·K²)	DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C
Seebeck Coefficient(S)2 entries	-158.1	μV/K	DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C
↳	325.8	μV/K	DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C

N entriesMultiple entries per property — large groups are collapsed; click a summary row to expand. Use filters above to narrow by form, heat treatment, basis, or test environment.

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Energy Above Hull(ΔEhull)	0.000	eV/atom	DFT · OptB88vdW
Formation Energy(ΔHf)	-0.5608	eV/atom	DFT · OptB88vdW

Verified Unverified Low confidence (<80%) Link to source

Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data

Regulatory Screening

Environmental

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

In4Bi2S9

Physical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental