Indium nitride oxide (In₃NO₃) is an experimental ceramic compound combining indium, nitrogen, and oxygen phases, belonging to the family of III-V and oxynitride semiconductors under active research. This material is primarily of interest in advanced semiconductor and optoelectronic device development, where its unique bandgap and electronic properties could enable applications in high-power electronics, UV photodetectors, or wide-bandgap device engineering; however, it remains largely in the research phase without widespread industrial adoption, making it most relevant for materials scientists and device researchers exploring next-generation compound semiconductors rather than established engineering applications.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 6.833 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.2250 | eV | — | ||
Magnetic Moment(μB) | 0.000 | µB | — | ||
Seebeck Coefficient(S) | -49.46 | µV/K | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.02690 | eV/atom | — | ||
Formation Energy(ΔHf) | -1.192 | eV/atom | — |