In3NO3

ceramic

· JVASP-44085· In3NO3

Indium nitride oxide (In₃NO₃) is an experimental ceramic compound combining indium, nitrogen, and oxygen phases, belonging to the family of III-V and oxynitride semiconductors under active research. This material is primarily of interest in advanced semiconductor and optoelectronic device development, where its unique bandgap and electronic properties could enable applications in high-power electronics, UV photodetectors, or wide-bandgap device engineering; however, it remains largely in the research phase without widespread industrial adoption, making it most relevant for materials scientists and device researchers exploring next-generation compound semiconductors rather than established engineering applications.

wide-bandgap semiconductorsresearch and developmentoptoelectronic deviceshigh-power electronicsUV detectioncompound semiconductor engineering

Compliance & Regulations

?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Density(ρ)	0.2469	lb/in³	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions
Band Gap(Eg)	0.2250	eV	—
Magnetic Moment(μB)	0.000	µB	—
Seebeck Coefficient(S)	-49.46	µV/K	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Energy Above Hull(ΔEhull)	0.02690	eV/atom	—
Formation Energy(ΔHf)	-1.192	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

In3NO3

Physical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental