Indium selenide (In₂Se₃) is a III-VI semiconductor compound with a layered crystal structure, belonging to the family of transition metal chalcogenides. It is primarily of research and emerging technology interest rather than established industrial production, with potential applications in next-generation optoelectronic and energy conversion devices that exploit its direct bandgap and tunable electronic properties.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 37.12 | GPa | DFT · OptB88vdW | ||
Exfoliation Energy(Eexf) | 52.73 | meV/atom | DFT · OptB88vdW | ||
Poisson's Ratio(ν) | 0.3000 | - | DFT · OptB88vdW | ||
Shear Modulus(G) | 18.43 | GPa | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 5.846 | kg/m³ | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)3 entries | 1.200 | eV | Measured | ||
| ↳ | 0.000 | eV | DFT · OptB88vdW | ||
| ↳ | 0.7420 | eV | DFT · TBmBJ | ||
High-Frequency Dielectric Constant (ε∞)(ε∞) | 7.851 | - | DFT · TBmBJ | ||
Spectroscopic Limited Maximum Efficiency (SLME)(SLME) | 25.23 | % | DFT · TBmBJ |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.000 | eV/atom | DFT · OptB88vdW | ||
Formation Energy(ΔHf)2 entries | -0.4799 | eV/atom | DFT · OptB88vdW | ||
| ↳ | -0.6766 | eV/atom | Measured |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data