Indium selenide (In₂Se₃) is a III-VI semiconductor compound with a layered crystal structure, belonging to the family of transition metal chalcogenides. It is primarily of research and emerging technology interest rather than established industrial production, with potential applications in next-generation optoelectronic and energy conversion devices that exploit its direct bandgap and tunable electronic properties.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 5,383.8 | ksi | — | ||
Exfoliation Energy(Eexf) | 52.73 | meV/atom | — | ||
Poisson's Ratio(ν) | 0.3000 | - | — | ||
Shear Modulus(G) | 2,673 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.2112 | lb/in³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 1.200 | eV | — | ||
| ↳ | 0.3710 range 0.000–0.7420median of 2 measurements | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.000 | eV/atom | — | ||
Formation Energy(ΔHf)2 entries | -0.6766 | eV/atom | — | ||
| ↳ | -0.4799 | eV/atom | — |