In2GaBiS6
ceramic· JVASP-29422· In2GaBiS6
In2GaBiS6 is a quaternary chalcogenide ceramic compound combining indium, gallium, bismuth, and sulfur elements. This is primarily a research material under investigation for optoelectronic and photovoltaic applications, particularly in the semiconductor ceramics family where mixed-metal sulfides show promise for tunable bandgaps and light-matter interactions. The material's multi-component structure allows researchers to engineer electronic properties for next-generation solar cells, infrared detectors, or wide-bandgap semiconductor devices where conventional binary or ternary compounds fall short.
thin-film photovoltaicsinfrared optoelectronicssemiconductor researchchalcogenide ceramicsbandgap engineeringnext-generation solar cells
Compliance & Regulations
?Conflict Free?RoHS?REACH?TSCA?Prop 65
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | — | kg/m³ | — | — |
Verified Unverified Low confidence (<80%) Link to source
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | — | eV | — | — | |
Seebeck Coefficient(S) | — | µV/K | — | — |
Verified Unverified Low confidence (<80%) Link to source
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | — | eV/atom | — | — | |
Formation Energy(ΔHf) | — | eV/atom | — | — |
Verified Unverified Low confidence (<80%) Link to source
Regulatory Screening
Environmental
RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.