In2GaBiS6 is a quaternary chalcogenide ceramic compound combining indium, gallium, bismuth, and sulfur elements. This is primarily a research material under investigation for optoelectronic and photovoltaic applications, particularly in the semiconductor ceramics family where mixed-metal sulfides show promise for tunable bandgaps and light-matter interactions. The material's multi-component structure allows researchers to engineer electronic properties for next-generation solar cells, infrared detectors, or wide-bandgap semiconductor devices where conventional binary or ternary compounds fall short.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.1761 | lb/in³ | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 1.790 | eV | DFT · OptB88vdW | ||
| ↳ | 2.761 | eV | DFT · TBmBJ | ||
High-Frequency Dielectric Constant (ε∞)(ε∞)2 entries | 9.231 | - | DFT · OptB88vdW | ||
| ↳ | 6.962 | - | DFT · TBmBJ | ||
Thermoelectric Power Factor(PF)2 entries | 0.00233 | W/(m·K²) | DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C | ||
| ↳ | 0.00133 | W/(m·K²) | DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C | ||
Seebeck Coefficient(S)2 entries | -248.5 | μV/K | DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C | ||
| ↳ | 317.6 | μV/K | DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C | ||
Spectroscopic Limited Maximum Efficiency (SLME)(SLME) | 7.830 | % | DFT · TBmBJ |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.000 | eV/atom | DFT · OptB88vdW | ||
Formation Energy(ΔHf) | -0.6097 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data