In2GaBiS6

ceramic

· JVASP-29422· In2GaBiS6

In2GaBiS6 is a quaternary chalcogenide ceramic compound combining indium, gallium, bismuth, and sulfur elements. This is primarily a research material under investigation for optoelectronic and photovoltaic applications, particularly in the semiconductor ceramics family where mixed-metal sulfides show promise for tunable bandgaps and light-matter interactions. The material's multi-component structure allows researchers to engineer electronic properties for next-generation solar cells, infrared detectors, or wide-bandgap semiconductor devices where conventional binary or ternary compounds fall short.

thin-film photovoltaicsinfrared optoelectronicssemiconductor researchchalcogenide ceramicsbandgap engineeringnext-generation solar cells

Compliance & Regulations

?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Density(ρ)	0.1761	lb/in³	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	1.790	eV	—
Seebeck Coefficient(S)	-248.5	µV/K	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Energy Above Hull(ΔEhull)	0.000	eV/atom	—
Formation Energy(ΔHf)	-0.6097	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

In2GaBiS6

Physical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental