In2AsP

ceramic

· JVASP-111043· In2AsP

Indium arsenide phosphide (In₂AsP) is a III-V semiconductor compound ceramic used primarily in optoelectronic and high-frequency electronic applications. This material is part of the indium arsenide family and is valued for its direct bandgap properties and lattice characteristics that enable efficient light emission and high electron mobility. In₂AsP is notable in infrared detector systems, laser diodes, and integrated photonic circuits where monolithic integration with related III-V compounds offers advantages over discrete components or alternative semiconductors like silicon or GaAs in specialized wavelength ranges.

infrared photodetectorsintegrated photonicssemiconductor lasershigh-speed electronicsfiber-optic communicationsresearch & development (III-V compounds)

Compliance & Regulations

?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Density(ρ)	4.993	kg/m³	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.3490 range 0.000–0.6980median of 2 measurements	eV	—
Magnetic Moment(μB)	0.000	µB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Energy Above Hull(ΔEhull)	0.00170	eV/atom	—
Formation Energy(ΔHf)	-0.2165	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

In2AsP

Physical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental