Indium arsenide phosphide (In₂AsP) is a III-V semiconductor compound ceramic used primarily in optoelectronic and high-frequency electronic applications. This material is part of the indium arsenide family and is valued for its direct bandgap properties and lattice characteristics that enable efficient light emission and high electron mobility. In₂AsP is notable in infrared detector systems, laser diodes, and integrated photonic circuits where monolithic integration with related III-V compounds offers advantages over discrete components or alternative semiconductors like silicon or GaAs in specialized wavelength ranges.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.1804 | lb/in³ | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 0.000 | eV | DFT · OptB88vdW | ||
| ↳ | 0.6980 | eV | DFT · TBmBJ | ||
High-Frequency Dielectric Constant (ε∞)(ε∞) | 10.74 | - | DFT · TBmBJ | ||
Magnetic Moment(μB) | 0.000 | µB | DFT · OptB88vdW | ||
Spectroscopic Limited Maximum Efficiency (SLME)(SLME) | 24.04 | % | DFT · TBmBJ |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.00170 | eV/atom | DFT · OptB88vdW | ||
Formation Energy(ΔHf) | -0.2165 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data