In2AsP
ceramic· JVASP-111043· In2AsP
Indium arsenide phosphide (In₂AsP) is a III-V semiconductor compound ceramic used primarily in optoelectronic and high-frequency electronic applications. This material is part of the indium arsenide family and is valued for its direct bandgap properties and lattice characteristics that enable efficient light emission and high electron mobility. In₂AsP is notable in infrared detector systems, laser diodes, and integrated photonic circuits where monolithic integration with related III-V compounds offers advantages over discrete components or alternative semiconductors like silicon or GaAs in specialized wavelength ranges.
infrared photodetectorsintegrated photonicssemiconductor lasershigh-speed electronicsfiber-optic communicationsresearch & development (III-V compounds)
Compliance & Regulations
?Conflict Free?RoHS?REACH?TSCA?Prop 65
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.1804 | lb/in³ | — |
Verified Unverified Low confidence (<80%) Link to source
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.3490 range 0.000–0.6980median of 2 measurements | eV | — | ||
Magnetic Moment(μB) | 0.000 | µB | — |
Verified Unverified Low confidence (<80%) Link to source
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.00170 | eV/atom | — | ||
Formation Energy(ΔHf) | -0.2165 | eV/atom | — |
Verified Unverified Low confidence (<80%) Link to source
Regulatory Screening
Environmental
RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.