HoScO3 is a rare-earth oxide semiconductor compound combining holmium and scandium oxides in a perovskite-related crystal structure. This material is primarily of research interest for optoelectronic and photonic applications, where rare-earth dopants and mixed-oxide semiconductors are explored for their unique electronic and optical properties. While not yet established in mainstream industrial production, HoScO3 represents a family of advanced oxides being investigated for potential use in solid-state lighting, scintillators, and high-temperature electronic devices where conventional semiconductors reach performance limits.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 178.7 | GPa | — | ||
Poisson's Ratio(ν) | 0.2900 | - | — | ||
Shear Modulus(G) | 87.35 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 6.971 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 2.543 | eV | — | ||
| ↳ | 4.480 | eV | — | ||
Magnetic Moment(μB)2 entries | 0.000 | μB | — | ||
| ↳ | 0.000 | µB | — | ||
Seebeck Coefficient(S) | -407.2 | µV/K | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.01110 | eV/atom | — | ||
Formation Energy(ΔHf)2 entries | -3.293 | eV/atom | — | ||
| ↳ | -3.830 | eV/atom | — |