HoScO3

semiconductor

· HoScO3

HoScO3 is a rare-earth oxide semiconductor compound combining holmium and scandium oxides in a perovskite-related crystal structure. This material is primarily of research interest for optoelectronic and photonic applications, where rare-earth dopants and mixed-oxide semiconductors are explored for their unique electronic and optical properties. While not yet established in mainstream industrial production, HoScO3 represents a family of advanced oxides being investigated for potential use in solid-state lighting, scintillators, and high-temperature electronic devices where conventional semiconductors reach performance limits.

research-grade optoelectronicsscintillation detectorssolid-state lightinghigh-temperature electronicsrare-earth oxide photonicsexperimental semiconductor devices

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions
Bulk Modulus(K)	25,919.7	ksi	DFT · OptB88vdW
Poisson's Ratio(ν)	0.2900	-	DFT · OptB88vdW
Shear Modulus(G)	12,669	ksi	DFT · OptB88vdW

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Density(ρ)	0.2518	lb/in³	DFT · OptB88vdW

Verified Unverified Low confidence (<80%) Link to source

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Method

Carrier

Property	Value	Unit	Conditions
Band Gap(Eg)3 entries	4.480	eV	DFT · OptB88vdW
↳	5.397	eV	DFT · TBmBJ
↳	2.543	eV	DFT · PBE
High-Frequency Dielectric Constant (ε∞)(ε∞)2 entries	4.737	-	DFT · OptB88vdW
↳	3.877	-	DFT · TBmBJ
Magnetic Moment(μB)2 entries	0.000	μB	DFT
↳	0.000	µB	DFT · OptB88vdW
Thermoelectric Power Factor(PF)2 entries	0.00117	W/(m·K²)	DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C
↳	0.00101	W/(m·K²)	DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C
Seebeck Coefficient(S)2 entries	-407.2	μV/K	DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C
↳	317.2	μV/K	DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C
Spectroscopic Limited Maximum Efficiency (SLME)(SLME)	0.000	%	DFT · TBmBJ

N entriesMultiple entries per property — large groups are collapsed; click a summary row to expand. Use filters above to narrow by form, heat treatment, basis, or test environment.

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Method

Property	Value	Unit	Conditions
Energy Above Hull(ΔEhull)	0.01110	eV/atom	DFT · OptB88vdW
Formation Energy(ΔHf)2 entries	-3.293	eV/atom	DFT
↳	-3.830	eV/atom	DFT · OptB88vdW

N entriesMultiple entries per property — large groups are collapsed; click a summary row to expand. Use filters above to narrow by form, heat treatment, basis, or test environment.

Verified Unverified Low confidence (<80%) Link to source

Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data

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RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

HoScO3 — Properties & Data | MatWorld

HoScO3

Mechanical Properties

Physical Properties

Electrical Properties

Other Properties

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