Hg2 As2 O6

Hg₂As₂O₆ is an inorganic compound combining mercury, arsenic, and oxygen—a mixed-metal oxide semiconductor with a layered crystal structure. This material remains largely in the research phase, studied primarily for its electronic and photonic properties within the broader family of heavy-metal oxides and arsenate compounds. Industrial applications are limited due to toxicity concerns (mercury and arsenic content), but it is of interest in specialized research contexts for potential use in optoelectronics, sensing, or novel semiconductor device architectures where its unique band structure and crystal symmetry may offer advantages over conventional materials.