Hg2 As2 O6
semiconductor· Hg2 As2 O6
Hg₂As₂O₆ is an inorganic compound combining mercury, arsenic, and oxygen—a mixed-metal oxide semiconductor with a layered crystal structure. This material remains largely in the research phase, studied primarily for its electronic and photonic properties within the broader family of heavy-metal oxides and arsenate compounds. Industrial applications are limited due to toxicity concerns (mercury and arsenic content), but it is of interest in specialized research contexts for potential use in optoelectronics, sensing, or novel semiconductor device architectures where its unique band structure and crystal symmetry may offer advantages over conventional materials.
experimental semiconductorsoptoelectronic researchchemical sensing devicesphotocatalysis researchX-ray/gamma-ray detection
Compliance & Regulations
?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | — | eV | — | — |
Verified Unverified Low confidence (<80%) Link to source
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | — | eV/atom | — | — |
Verified Unverified Low confidence (<80%) Link to source
Regulatory Screening
Environmental
Export Control
RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.