HfScO2N

semiconductor

· HfScO2N

HfScO₂N is an experimental oxynitride ceramic compound combining hafnium, scandium, oxygen, and nitrogen phases, developed as an advanced gate dielectric and thin-film material for next-generation semiconductor devices. This material family is investigated for high-κ dielectric applications in logic and memory chips, where it offers potential advantages in thermal stability, band alignment, and resistance to oxygen diffusion compared to conventional oxides. Its research focus reflects the semiconductor industry's ongoing effort to scale MOSFET and memory technologies below 5 nm nodes while managing leakage current and maintaining reliable electrical performance.

advanced gate dielectricssub-5nm semiconductor nodeshigh-κ thin filmsmemory device integrationMOSFET scalingresearch/development materials

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	1.000	eV	—
Magnetic Moment(μB)	-0.000555	μB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	0.7600	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

HfScO2N

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control