HfScO2N
semiconductor· HfScO2N
HfScO₂N is an experimental oxynitride ceramic compound combining hafnium, scandium, oxygen, and nitrogen phases, developed as an advanced gate dielectric and thin-film material for next-generation semiconductor devices. This material family is investigated for high-κ dielectric applications in logic and memory chips, where it offers potential advantages in thermal stability, band alignment, and resistance to oxygen diffusion compared to conventional oxides. Its research focus reflects the semiconductor industry's ongoing effort to scale MOSFET and memory technologies below 5 nm nodes while managing leakage current and maintaining reliable electrical performance.
advanced gate dielectricssub-5nm semiconductor nodeshigh-κ thin filmsmemory device integrationMOSFET scalingresearch/development materials
Compliance & Regulations
?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | — | eV | — | — | |
Magnetic Moment(μB) | — | μB | — | — |
Verified Unverified Low confidence (<80%) Link to source
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | — | eV/atom | — | — |
Verified Unverified Low confidence (<80%) Link to source
Regulatory Screening
Environmental
Export Control
RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.