HfS3
semiconductorHfS3 is a layered transition metal trichalcogenide semiconductor composed of hafnium and sulfur, belonging to the family of two-dimensional materials that can be mechanically exfoliated into thin sheets. This compound is primarily of research interest for next-generation electronics and optoelectronics, where its tunable bandgap and layered structure make it a candidate for flexible devices, photodetectors, and field-effect transistors that could complement or replace conventional silicon in specialized applications. HfS3 remains largely in the experimental phase, but represents a promising direction in van der Waals materials engineering for scaled-down electronic systems where conventional bulk semiconductors reach performance or miniaturization limits.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K)2 entries | — | ksi | — | — | |
| ↳ | — | ksi | — | — | |
Exfoliation Energy(Eexf) | — | meV/atom | — | — | |
Poisson's Ratio(ν) | — | - | — | — | |
Shear Modulus(G)2 entries | — | ksi | — | — | |
| ↳ | — | ksi | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | — | lb/in³ | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | — | eV | — | — | |
| ↳ | — | eV | — | — | |
Dielectric Constant (Relative Permittivity)(εr)2 entries | — | - | — | — | |
| ↳ | — | - | — | — | |
Electronic Dielectric Tensor(ε∞) | Matrix (redacted) | - | — | — | |
Total Dielectric Tensor(ε) | Matrix (redacted) | - | — | — | |
Magnetic Moment(μB) | — | µB | — | — | |
Piezoelectric Modulus(eij) | — | C/m² | — | — | |
Seebeck Coefficient(S) | — | µV/K | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | — | eV/atom | — | — | |
Formation Energy(ΔHf) | — | eV/atom | — | — |