HfHgO3 is an experimental ternary oxide semiconductor combining hafnium and mercury oxides, representing a rare composition in the perovskite-related oxide family. This material remains primarily in research phase, with potential applications in advanced optoelectronic and high-permittivity dielectric devices where the combined properties of hafnium and mercury oxides might enable novel functionality. Its high density and rigid elastic structure suggest interest in specialized microelectronics or radiation-detection applications, though industrial adoption is limited and material synthesis and phase stability require further development.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 24,105.3 | ksi | — | ||
Poisson's Ratio(ν) | 0.3500 | - | — | ||
Shear Modulus(G) | 8,972 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.3680 | lb/in³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)3 entries | 1.593 | eV | — | ||
| ↳ | 0.000 | eV | — | ||
| ↳ | 0.000 | eV | — | ||
Magnetic Moment(μB)3 entries | 0.000 | μB | — | ||
| ↳ | -0.5848 | μB | — | ||
| ↳ | 0.000 | µB | — | ||
Seebeck Coefficient(S) | -4.620 | µV/K | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.2968 | eV/atom | — | ||
Formation Energy(ΔHf)3 entries | -2.228 | eV/atom | — | ||
| ↳ | 1.640 | eV/atom | — | ||
| ↳ | -2.087 | eV/atom | — |