Hafnium oxide (HfO₂) is a high-performance ceramic compound valued for its exceptional thermal stability, high melting point, and excellent dielectric properties. This material finds critical use in advanced semiconductor manufacturing as a gate dielectric in modern transistors, as well as in thermal barrier coatings for aerospace applications where resistance to extreme temperatures is essential. Engineers select hafnium oxide over alternatives like silicon dioxide when superior thermal performance, higher dielectric constant, or enhanced chemical stability at elevated temperatures is required.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 235.4 | GPa | — | ||
Shear Modulus(G) | 121.4 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 4.315 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -3.798 | eV/atom | — |