Hf2 Br2 N2

semiconductor

· Hf2 Br2 N2

Hf2Br2N2 is an experimental semiconductor compound combining hafnium, bromine, and nitrogen elements, likely synthesized for research into novel wide-bandgap or high-temperature semiconductor materials. This compound belongs to the emerging class of mixed-anion semiconductors being investigated for potential optoelectronic, high-power, or extreme-environment device applications where traditional semiconductors reach performance limits. While not yet established in mainstream industrial production, materials in this family are of interest to researchers exploring next-generation alternatives to conventional nitrides and oxides for specialized semiconductor applications.

experimental semiconductor researchhigh-temperature electronicswide-bandgap device developmentoptoelectronic prototypingextreme environment sensorsmaterials science investigation

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Bulk Modulus(K)	59.37	GPa	—
Shear Modulus(G)	41.12	GPa	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	2.204	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-1.816	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Hf2 Br2 N2

Mechanical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control