Hf2Br2N2 is an experimental semiconductor compound combining hafnium, bromine, and nitrogen elements, likely synthesized for research into novel wide-bandgap or high-temperature semiconductor materials. This compound belongs to the emerging class of mixed-anion semiconductors being investigated for potential optoelectronic, high-power, or extreme-environment device applications where traditional semiconductors reach performance limits. While not yet established in mainstream industrial production, materials in this family are of interest to researchers exploring next-generation alternatives to conventional nitrides and oxides for specialized semiconductor applications.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 8,610.5 | ksi | DFT · OptB88vdW | ||
Shear Modulus(G) | 5,964 | ksi | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 2.204 | eV | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -1.816 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data