Hf1 Hg1 O3
semiconductor· Hf1 Hg1 O3
HfHgO₃ is an experimental ternary oxide semiconductor compound combining hafnium, mercury, and oxygen. This material belongs to the family of complex metal oxides and is primarily of research interest for its potential semiconductor properties, though industrial applications remain limited. Given the perovskite-like composition, this compound may be investigated for optoelectronic devices, photocatalysis, or solid-state applications where the combined properties of hafnium's high refractive index and chemical stability could offer advantages over conventional semiconductors.
experimental semiconductor researchoptoelectronic device developmentphotocatalytic materialsadvanced ceramicsmaterials physics study
Compliance & Regulations
?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | — | Pa | — | — | |
Shear Modulus(G) | — | Pa | — | — |
Verified Unverified Low confidence (<80%) Link to source
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | — | eV | — | — |
Verified Unverified Low confidence (<80%) Link to source
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | — | eV/atom | — | — |
Verified Unverified Low confidence (<80%) Link to source
Regulatory Screening
Environmental
Export Control
RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.