Hf1 Hg1 O3

semiconductor

· Hf1 Hg1 O3

HfHgO₃ is an experimental ternary oxide semiconductor compound combining hafnium, mercury, and oxygen. This material belongs to the family of complex metal oxides and is primarily of research interest for its potential semiconductor properties, though industrial applications remain limited. Given the perovskite-like composition, this compound may be investigated for optoelectronic devices, photocatalysis, or solid-state applications where the combined properties of hafnium's high refractive index and chemical stability could offer advantages over conventional semiconductors.

experimental semiconductor researchoptoelectronic device developmentphotocatalytic materialsadvanced ceramicsmaterials physics study

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Bulk Modulus(K)	166.2	GPa	—
Shear Modulus(G)	61.86	GPa	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.1965	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-2.135	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Hf1 Hg1 O3

Mechanical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control