GeTe is a binary compound semiconductor and phase-change material that belongs to the chalcogenide family, combining germanium and tellurium elements. It is primarily investigated for thermal energy storage, nonvolatile memory applications (such as phase-change RAM), and infrared optics, where its ability to switch between crystalline and amorphous states is exploited. GeTe is notable for its reversible structural transition and strong optical contrast between phases, making it attractive as an alternative to more common phase-change materials in next-generation data storage and advanced thermal management systems.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K)3 entries | 29.57 | GPa | — | ||
| ↳ | 31.00 | GPa | — | ||
| ↳ | 36.89 | GPa | — | ||
Elastic Compliance Tensor(Sij) | Matrix (redacted) | 1/GPa | — | ||
Elastic Anisotropy(AU) | 2.496 | - | — | ||
Elastic Stiffness Tensor(Cij) | Matrix (redacted) | Pa | — | ||
Exfoliation Energy(Eexf) | 543.5 | meV/atom | — | ||
Poisson's Ratio(ν)2 entries | 0.1777 | - | — | ||
| ↳ | 0.2200 | - | — | ||
Shear Modulus(G)3 entries | 24.28 | GPa | — | ||
| ↳ | 23.94 | GPa | — | ||
| ↳ | 27.43 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 5.926 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.6440 | eV | — | ||
Dielectric Constant (Relative Permittivity)(εr) | 93.99 | - | — | ||
Magnetic Moment(μB) | 0.000 | µB | — | ||
Piezoelectric Modulus(eij)2 entries | 2.135 | C/m² | — | ||
| ↳ | 0.9662 | C/m² | — | ||
Piezoelectric Stress Tensor(eij) | Matrix (redacted) | C/m² | — | ||
Seebeck Coefficient(S) | -258.3 | µV/K | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.01610 | eV/atom | — | ||
Formation Energy(ΔHf)2 entries | -0.2513 | eV/atom | — | ||
| ↳ | -0.09429 | eV/atom | — |