GeTe is a binary compound semiconductor and phase-change material that belongs to the chalcogenide family, combining germanium and tellurium elements. It is primarily investigated for thermal energy storage, nonvolatile memory applications (such as phase-change RAM), and infrared optics, where its ability to switch between crystalline and amorphous states is exploited. GeTe is notable for its reversible structural transition and strong optical contrast between phases, making it attractive as an alternative to more common phase-change materials in next-generation data storage and advanced thermal management systems.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K)3 entries | 4,496.7 | ksi | DFT | ||
| ↳ | 5,350.4 | ksi | DFT · OptB88vdW | ||
| ↳ | 4,289.1 | ksi | DFT · PBE | ||
Elastic Compliance Tensor(Sij) | Matrix (redacted) | 1/GPa | DFT · PBE | ||
Elastic Anisotropy(AU) | 2.496 | - | DFT · PBE | ||
Elastic Stiffness Tensor(Cij) | Matrix (redacted) | ksi | DFT · PBE | ||
Exfoliation Energy(Eexf) | 543.5 | meV/atom | DFT · OptB88vdW | ||
Poisson's Ratio(ν)2 entries | 0.2200 | - | DFT · OptB88vdW | ||
| ↳ | 0.1777 | - | DFT · PBE | ||
Shear Modulus(G)3 entries | 3,472.5 | ksi | DFT | ||
| ↳ | 3,978.4 | ksi | DFT · OptB88vdW | ||
| ↳ | 3,521.7 | ksi | DFT · PBE |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.2141 | lb/in³ | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 0.7460 | eV | DFT · OptB88vdW | ||
| ↳ | 0.8240 | eV | DFT · TBmBJ | ||
Dielectric Constant (Relative Permittivity)(εr) | 93.99 | - | DFT · OptB88vdW | ||
High-Frequency Dielectric Constant (ε∞)(ε∞)2 entries | 34.07 | - | DFT · OptB88vdW | ||
| ↳ | 25.54 | - | DFT · TBmBJ | ||
Electron Effective Mass(m*e) | 0.2100 | me | DFT · OptB88vdW · 27°C | ||
Hole Effective Mass(m*h) | 0.2767 | me | DFT · OptB88vdW · 27°C | ||
Magnetic Moment(μB) | 0.000 | µB | DFT · OptB88vdW | ||
Piezoelectric Modulus(eij)2 entries | 0.9662 | C/m² | DFT · OptB88vdW | ||
| ↳ | 2.135 | C/m² | DFT · PBE | ||
Piezoelectric Stress Tensor(eij) | Matrix (redacted) | C/m² | DFT · PBE | ||
Thermoelectric Power Factor(PF)2 entries | 0.00593 | W/(m·K²) | DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C | ||
| ↳ | 0.00584 | W/(m·K²) | DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C | ||
Seebeck Coefficient(S)2 entries | -258.3 | μV/K | DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C | ||
| ↳ | 250 | μV/K | DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C | ||
Spectroscopic Limited Maximum Efficiency (SLME)(SLME) | 26.74 | % | DFT · TBmBJ |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.01610 | eV/atom | DFT · OptB88vdW | ||
Formation Energy(ΔHf)2 entries | -0.09429 | eV/atom | DFT · OptB88vdW | ||
| ↳ | -0.2513 | eV/atom | Measured |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data