GeSnO₃ is an experimental mixed-metal oxide semiconductor combining germanium, tin, and oxygen, belonging to the broader family of perovskite and post-perovskite oxide compounds. This material is primarily of research interest for next-generation optoelectronic and photovoltaic applications, where its tunable bandgap and potential for low-cost synthesis offer advantages over conventional silicon and III-V semiconductors. GeSnO₃ is notable in emerging fields seeking alternatives to rare-earth-dependent semiconductors and represents active exploration in materials science rather than established industrial production.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 1.097 | eV | — | ||
| ↳ | 3.100 | eV | — | ||
Magnetic Moment(μB) | -0.000181 | μB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf)2 entries | -1.525 | eV/atom | — | ||
| ↳ | 0.4600 | eV/atom | — |