GeSnO3

semiconductor
· GeSnO3

GeSnO₃ is an experimental mixed-metal oxide semiconductor combining germanium, tin, and oxygen, belonging to the broader family of perovskite and post-perovskite oxide compounds. This material is primarily of research interest for next-generation optoelectronic and photovoltaic applications, where its tunable bandgap and potential for low-cost synthesis offer advantages over conventional silicon and III-V semiconductors. GeSnO₃ is notable in emerging fields seeking alternatives to rare-earth-dependent semiconductors and represents active exploration in materials science rather than established industrial production.

photovoltaic researchoptoelectronic devicesthin-film semiconductorslead-free perovskite alternativessolar cell developmentmaterials research and prototyping

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65
PropertyValueUnitConditionsSource
Band Gap(Eg)2 entries
eV
eV
Magnetic Moment(μB)
μB
N entriesMultiple entries per property — large groups are collapsed; click a summary row to expand. Use filters above to narrow by form / heat treatment / basis.
Verified Unverified Low confidence (<80%) Link to source
PropertyValueUnitConditionsSource
Formation Energy(ΔHf)2 entries
eV/atom
eV/atom
N entriesMultiple entries per property — large groups are collapsed; click a summary row to expand. Use filters above to narrow by form / heat treatment / basis.
Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

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