GePbS3 is a ternary chalcogenide semiconductor composed of germanium, lead, and sulfur, belonging to the family of IV-VI semiconductors with potential for infrared and thermoelectric applications. This material is primarily investigated in research contexts for mid-infrared optics, thermal imaging detectors, and solid-state thermoelectric devices, where its narrow bandgap and mixed-valence composition offer advantages over binary alternatives in wavelength tunability and lattice engineering. Engineers consider such lead–germanium–sulfur compounds when designing cost-effective infrared sensing systems or exploring room-temperature thermoelectric materials that can operate in harsh thermal environments.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 4.916 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 2.400 | eV | — | ||
| ↳ | 1.658 | eV | — | ||
Magnetic Moment(μB) | 0.000 | µB | — | ||
Seebeck Coefficient(S) | -205.2 | µV/K | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.000 | eV/atom | — | ||
Formation Energy(ΔHf) | -0.4963 | eV/atom | — |