GePbS3 — Properties & Data | MatWorld

GePbS3

Name: GePbS3
Brand: MatWorld

semiconductor

· GePbS3

GePbS3 is a ternary chalcogenide semiconductor composed of germanium, lead, and sulfur, belonging to the family of IV-VI semiconductors with potential for infrared and thermoelectric applications. This material is primarily investigated in research contexts for mid-infrared optics, thermal imaging detectors, and solid-state thermoelectric devices, where its narrow bandgap and mixed-valence composition offer advantages over binary alternatives in wavelength tunability and lattice engineering. Engineers consider such lead–germanium–sulfur compounds when designing cost-effective infrared sensing systems or exploring room-temperature thermoelectric materials that can operate in harsh thermal environments.

infrared detectors and opticsthermal imaging sensorsthermoelectric energy conversionresearch semiconductor compoundsmid-infrared applications

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Density(ρ)	0.1776	lb/in³	DFT · OptB88vdW

Verified Unverified Low confidence (<80%) Link to source

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Method

Carrier

Property	Value	Unit	Conditions
Band Gap(Eg)3 entries	1.658	eV	DFT · OptB88vdW
↳	2.597	eV	DFT · TBmBJ
↳	2.400	eV	Measured
High-Frequency Dielectric Constant (ε∞)(ε∞)2 entries	8.504	-	DFT · OptB88vdW
↳	6.342	-	DFT · TBmBJ
Electron Effective Mass(m*e)	0.9233	me	DFT · OptB88vdW · 27°C
Hole Effective Mass(m*h)	2.630	me	DFT · OptB88vdW · 27°C
Magnetic Moment(μB)	0.000	µB	DFT · OptB88vdW
Thermoelectric Power Factor(PF)2 entries	0.00108	W/(m·K²)	DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C
↳	0.00128	W/(m·K²)	DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C
Seebeck Coefficient(S)2 entries	-205.2	μV/K	DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C
↳	280.6	μV/K	DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C
Spectroscopic Limited Maximum Efficiency (SLME)(SLME)	10.79	%	DFT · TBmBJ

N entriesMultiple entries per property — large groups are collapsed; click a summary row to expand. Use filters above to narrow by form, heat treatment, basis, or test environment.

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Property	Value	Unit	Conditions	Source
Energy Above Hull(ΔEhull)	0.000	eV/atom	DFT · OptB88vdW
Formation Energy(ΔHf)	-0.4963	eV/atom	DFT · OptB88vdW

Verified Unverified Low confidence (<80%) Link to source

Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data

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GePbS3

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