Ge₂Te₅As₂ is a chalcogenide ceramic compound belonging to the germanium-tellurium-arsenic family, materials known for their amorphous or glassy phase-change behavior. This composition sits within the research domain of phase-change materials and chalcogenide glasses, which are primarily explored for non-volatile memory applications and optical switching devices rather than conventional structural or thermal applications. Engineers evaluate this material class for its potential in next-generation data storage technologies where reversible crystalline-amorphous transitions enable information encoding without moving parts.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 6.093 | kg/m³ | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.3630 | eV | DFT · OptB88vdW | ||
Dielectric Constant (Relative Permittivity)(εr) | 79.70 | - | DFT · PBE | ||
High-Frequency Dielectric Constant (ε∞)(ε∞) | 76.34 | - | DFT · OptB88vdW | ||
Electronic Dielectric Tensor(ε∞) | Matrix (redacted) | - | DFT · PBE | ||
Total Dielectric Tensor(ε) | Matrix (redacted) | - | DFT · PBE | ||
Electron Effective Mass(m*e) | 0.04000 | me | DFT · OptB88vdW · 27°C | ||
Hole Effective Mass(m*h) | 0.03667 | me | DFT · OptB88vdW · 27°C | ||
Magnetic Moment(μB) | 0.000 | µB | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.01130 | eV/atom | DFT · OptB88vdW | ||
Formation Energy(ΔHf) | -0.04395 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data