Ge₂Te₅As₂ is a chalcogenide ceramic compound belonging to the germanium-tellurium-arsenic family, materials known for their amorphous or glassy phase-change behavior. This composition sits within the research domain of phase-change materials and chalcogenide glasses, which are primarily explored for non-volatile memory applications and optical switching devices rather than conventional structural or thermal applications. Engineers evaluate this material class for its potential in next-generation data storage technologies where reversible crystalline-amorphous transitions enable information encoding without moving parts.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.2201 | lb/in³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.3630 | eV | — | ||
Dielectric Constant (Relative Permittivity)(εr) | 79.70 | - | — | ||
Electronic Dielectric Tensor(ε∞) | Matrix (redacted) | - | — | ||
Total Dielectric Tensor(ε) | Matrix (redacted) | - | — | ||
Magnetic Moment(μB) | 0.000 | µB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.01130 | eV/atom | — | ||
Formation Energy(ΔHf) | -0.04395 | eV/atom | — |