Ge2O3
semiconductorGe₂O₃ is a germanium oxide semiconductor compound that exists primarily as a research material rather than a commercial standard; it belongs to the broader family of group IV oxide semiconductors with potential applications in optoelectronics and high-temperature devices. The material is of interest to researchers exploring alternatives to more established semiconductors like GeO₂ or SiO₂, particularly for applications requiring specific bandgap properties or integration with germanium-based device architectures. Engineers consider Ge₂O₃ mainly in experimental contexts where germanium's higher carrier mobility and narrower bandgap compared to silicon-based oxides could provide performance advantages in specialized photonic or thermal applications, though material stability and processing challenges limit current industrial adoption.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | — | Pa | — | — | |
Poisson's Ratio(ν) | — | - | — | — | |
Shear Modulus(G) | — | Pa | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | — | kg/m³ | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | — | eV | — | — | |
| ↳ | — | eV | — | — | |
Dielectric Constant (Relative Permittivity)(εr) | — | - | — | — | |
Magnetic Moment(μB) | — | µB | — | — | |
Piezoelectric Modulus(eij) | — | C/m² | — | — | |
Seebeck Coefficient(S) | — | µV/K | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | — | eV/atom | — | — | |
Formation Energy(ΔHf)2 entries | — | eV/atom | — | — | |
| ↳ | — | eV/atom | — | — |