Ge2O3
semiconductorGe₂O₃ is a germanium oxide semiconductor compound that exists primarily as a research material rather than a commercial standard; it belongs to the broader family of group IV oxide semiconductors with potential applications in optoelectronics and high-temperature devices. The material is of interest to researchers exploring alternatives to more established semiconductors like GeO₂ or SiO₂, particularly for applications requiring specific bandgap properties or integration with germanium-based device architectures. Engineers consider Ge₂O₃ mainly in experimental contexts where germanium's higher carrier mobility and narrower bandgap compared to silicon-based oxides could provide performance advantages in specialized photonic or thermal applications, though material stability and processing challenges limit current industrial adoption.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 26,856.6 | ksi | — | ||
Poisson's Ratio(ν) | 0.2500 | - | — | ||
Shear Modulus(G) | 15,930.9 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.2153 | lb/in³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 0.2370 | eV | — | ||
| ↳ | 0.7770 | eV | — | ||
Dielectric Constant (Relative Permittivity)(εr) | 10.85 | - | — | ||
Magnetic Moment(μB) | 0.000 | µB | — | ||
Piezoelectric Modulus(eij) | 0.000 | C/m² | — | ||
Seebeck Coefficient(S) | -78.84 | µV/K | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.3651 | eV/atom | — | ||
Formation Energy(ΔHf)2 entries | -1.472 | eV/atom | — | ||
| ↳ | -1.235 | eV/atom | — |