Ge2O3 — Properties & Data | MatWorld

Ge2O3

semiconductor

· Ge2O3

Ge₂O₃ is a germanium oxide semiconductor compound that exists primarily as a research material rather than a commercial standard; it belongs to the broader family of group IV oxide semiconductors with potential applications in optoelectronics and high-temperature devices. The material is of interest to researchers exploring alternatives to more established semiconductors like GeO₂ or SiO₂, particularly for applications requiring specific bandgap properties or integration with germanium-based device architectures. Engineers consider Ge₂O₃ mainly in experimental contexts where germanium's higher carrier mobility and narrower bandgap compared to silicon-based oxides could provide performance advantages in specialized photonic or thermal applications, though material stability and processing challenges limit current industrial adoption.

experimental optoelectronicsinfrared detectorshigh-temperature semiconductorsgermanium-based device integrationresearch photonicswide-bandgap semiconductor exploration

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions
Bulk Modulus(K)	185.2	GPa	DFT · OptB88vdW
Poisson's Ratio(ν)	0.2500	-	DFT · OptB88vdW
Shear Modulus(G)	109.8	GPa	DFT · OptB88vdW

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Density(ρ)	5.960	kg/m³	DFT · OptB88vdW

Verified Unverified Low confidence (<80%) Link to source

Filter by

Method

Carrier

Property	Value	Unit	Conditions
Band Gap(Eg)3 entries	0.7770	eV	DFT · OptB88vdW
↳	2.308	eV	DFT · TBmBJ
↳	0.2370	eV	DFT · PBE
Dielectric Constant (Relative Permittivity)(εr)	10.85	-	DFT · OptB88vdW
High-Frequency Dielectric Constant (ε∞)(ε∞)2 entries	7.354	-	DFT · OptB88vdW
↳	5.642	-	DFT · TBmBJ
Electron Effective Mass(m*e)	0.3300	me	DFT · OptB88vdW · 27°C
Hole Effective Mass(m*h)	1.000	me	DFT · OptB88vdW · 27°C
Magnetic Moment(μB)	0.000	µB	DFT · OptB88vdW
Piezoelectric Modulus(eij)	0.000	C/m²	DFT · OptB88vdW
Thermoelectric Power Factor(PF)2 entries	0.000618	W/(m·K²)	DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C
↳	0.00303	W/(m·K²)	DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C
Seebeck Coefficient(S)2 entries	-78.84	μV/K	DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C
↳	379.6	μV/K	DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C
Spectroscopic Limited Maximum Efficiency (SLME)(SLME)	16.45	%	DFT · TBmBJ

N entriesMultiple entries per property — large groups are collapsed; click a summary row to expand. Use filters above to narrow by form, heat treatment, basis, or test environment.

Verified Unverified Low confidence (<80%) Link to source

Filter by

Method

Property	Value	Unit	Conditions
Energy Above Hull(ΔEhull)	0.3651	eV/atom	DFT · OptB88vdW
Formation Energy(ΔHf)2 entries	-1.472	eV/atom	DFT
↳	-1.235	eV/atom	DFT · OptB88vdW

N entriesMultiple entries per property — large groups are collapsed; click a summary row to expand. Use filters above to narrow by form, heat treatment, basis, or test environment.

Verified Unverified Low confidence (<80%) Link to source

Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Ge2O3

Mechanical Properties

Physical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control