Ge0.774Si0.226
semiconductor· Ge0.774Si0.226
Ge₀.₇₇₄Si₀.₂₂₆ is a silicon-germanium alloy semiconductor with a germanium-rich composition, engineered to modulate bandgap and lattice properties relative to pure silicon or germanium. This material is primarily developed for advanced optoelectronic and high-speed electronic devices where the intermediate bandgap of the SiGe system offers advantages over conventional semiconductors—particularly in infrared detection, heterojunction bipolar transistors (HBTs), and strained-layer heterostructures used in communications and imaging systems.
infrared photodetectorsheterojunction bipolar transistors (HBTs)strained-layer heterostructureshigh-frequency integrated circuitsthermal imaging sensorsfiber-optic communications
Compliance & Regulations
?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | — | eV | — | — |
Verified Unverified Low confidence (<80%) Link to source
Regulatory Screening
Environmental
Export Control
RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.