GdInO3 — Properties & Data | MatWorld

GdInO3

semiconductor

· GdInO3

GdInO3 is a ternary oxide semiconductor composed of gadolinium and indium, belonging to the family of rare-earth indium oxides. This material is primarily investigated in research contexts for wide-bandgap semiconductor applications, where its combination of rare-earth doping and indium oxide provides potential for transparent conducting oxides, optoelectronic devices, and high-k dielectric applications.

transparent conducting oxidesoptoelectronic deviceshigh-frequency electronicsthin-film transistorsresearch/experimental semiconductorsdielectric layers

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

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Method

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	1.499	eV	DFT · PBE
Magnetic Moment(μB)	0.000	μB	DFT

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-2.182	eV/atom	DFT

Verified Unverified Low confidence (<80%) Link to source

Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data

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RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

GdInO3

Electrical Properties

Other Properties

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