GdInO3
semiconductor· GdInO3
GdInO3 is a ternary oxide semiconductor composed of gadolinium and indium, belonging to the family of rare-earth indium oxides. This material is primarily investigated in research contexts for wide-bandgap semiconductor applications, where its combination of rare-earth doping and indium oxide provides potential for transparent conducting oxides, optoelectronic devices, and high-k dielectric applications.
transparent conducting oxidesoptoelectronic deviceshigh-frequency electronicsthin-film transistorsresearch/experimental semiconductorsdielectric layers
Compliance & Regulations
?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | — | eV | — | — | |
Magnetic Moment(μB) | — | μB | — | — |
Verified Unverified Low confidence (<80%) Link to source
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | — | eV/atom | — | — |
Verified Unverified Low confidence (<80%) Link to source
Regulatory Screening
Environmental
Export Control
RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.