GaZnO2N

ceramic

· GaZnO2N

GaZnO₂N is an experimental quaternary ceramic compound combining gallium, zinc, oxygen, and nitrogen—a research-stage material belonging to the oxynitride ceramic family. This material is being investigated for semiconductor and optoelectronic applications where wide bandgap and mixed-anion bonding could enable novel electronic or photonic properties distinct from binary oxides or nitrides. The compound remains primarily in academic research phases; its industrial adoption is limited, but it represents the broader materials-discovery effort to engineer new ceramic phases with tunable properties for next-generation devices in power electronics, visible-light photocatalysis, or wide-bandgap semiconductors.

research semiconductorswide-bandgap electronicsphotocatalytic materialsoptoelectronic devicesadvanced ceramics development

Compliance & Regulations

?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.000	eV	—
Magnetic Moment(μB)	1.960	μB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	1.720	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

GaZnO2N

Electrical Properties

Other Properties

Regulatory Screening

Environmental