GaZnO₂N is an experimental quaternary ceramic compound combining gallium, zinc, oxygen, and nitrogen—a research-stage material belonging to the oxynitride ceramic family. This material is being investigated for semiconductor and optoelectronic applications where wide bandgap and mixed-anion bonding could enable novel electronic or photonic properties distinct from binary oxides or nitrides. The compound remains primarily in academic research phases; its industrial adoption is limited, but it represents the broader materials-discovery effort to engineer new ceramic phases with tunable properties for next-generation devices in power electronics, visible-light photocatalysis, or wide-bandgap semiconductors.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | DFT · GLLB-SC | ||
Magnetic Moment(μB) | 1.960 | μB | DFT |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 1.720 | eV/atom | DFT |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data