GaSiAs

ceramic

· JVASP-75738· GaSiAs

GaSiAs is a ternary III-V ceramic compound combining gallium arsenide with silicon, representing an experimental wide-bandgap semiconductor material in the gallium arsenide family. This material is primarily of research interest for high-temperature and high-power electronic applications, where its wide bandgap and potential for heterostructure integration could enable devices operating in extreme conditions beyond the capabilities of conventional GaAs.

high-temperature semiconductorswide-bandgap electronicspower device researchintegrated photonics developmentradiation-hard space electronicsexperimental heterostructure devices

Compliance & Regulations

?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions
Bulk Modulus(K)	880.0	MPa	—
Poisson's Ratio(ν)	-0.5500	-	—
Shear Modulus(G)	1.790	GPa	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Density(ρ)	4.568	kg/m³	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.000	eV	—
Magnetic Moment(μB)	0.000	µB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Energy Above Hull(ΔEhull)	0.6864	eV/atom	—
Formation Energy(ΔHf)	0.4618	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

GaSiAs

Mechanical Properties

Physical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental