GaSiAs
ceramic· JVASP-75738· GaSiAs
GaSiAs is a ternary III-V ceramic compound combining gallium arsenide with silicon, representing an experimental wide-bandgap semiconductor material in the gallium arsenide family. This material is primarily of research interest for high-temperature and high-power electronic applications, where its wide bandgap and potential for heterostructure integration could enable devices operating in extreme conditions beyond the capabilities of conventional GaAs.
high-temperature semiconductorswide-bandgap electronicspower device researchintegrated photonics developmentradiation-hard space electronicsexperimental heterostructure devices
Compliance & Regulations
?Conflict Free?RoHS?REACH?TSCA?Prop 65
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 127.6 | ksi | — | ||
Poisson's Ratio(ν) | -0.5500 | - | — | ||
Shear Modulus(G) | 259.6 | ksi | — |
Verified Unverified Low confidence (<80%) Link to source
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.1650 | lb/in³ | — |
Verified Unverified Low confidence (<80%) Link to source
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | — | ||
Magnetic Moment(μB) | 0.000 | µB | — |
Verified Unverified Low confidence (<80%) Link to source
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.6864 | eV/atom | — | ||
Formation Energy(ΔHf) | 0.4618 | eV/atom | — |
Verified Unverified Low confidence (<80%) Link to source
Regulatory Screening
Environmental
RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.