GaP — Properties & Data | MatWorld

GaP

semiconductor

· GaP

Gallium phosphide (GaP) is a III-V compound semiconductor with a direct bandgap, commonly used in optoelectronic and high-frequency electronic devices. It is valued in applications requiring visible light emission, particularly red and yellow LEDs, as well as in integrated circuits and photodetectors where its wide bandgap and thermal stability offer advantages over silicon at elevated temperatures and high power densities. Engineers select GaP when direct optical emission in the visible spectrum is needed, or when operating conditions demand superior temperature performance and radiation hardness compared to conventional semiconductors.

Red and yellow LEDsVisible light optoelectronicsHigh-temperature electronicsIntegrated circuits (GaP substrates)Photodetectors and solar cellsRadiation-hardened devices

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

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Method

Property	Value	Unit	Conditions	Source
Bulk Modulus(K)3 entries	76.19	GPa	DFT
↳	46.23	GPa	DFT · OptB88vdW
↳	76.19	GPa	DFT · PBE
Elastic Compliance Tensor(Sij)	Matrix (redacted)	1/GPa	DFT · PBE
Elastic Anisotropy(AU)	0.3980	-	DFT · PBE
Elastic Stiffness Tensor(Cij)	Matrix (redacted)	Pa	DFT · PBE
Poisson's Ratio(ν)2 entries	-0.1100	-	DFT · OptB88vdW
↳	0.2230	-	DFT · PBE
Shear Modulus(G)3 entries	51.78	GPa	DFT
↳	17.50	GPa	DFT · OptB88vdW
↳	51.78	GPa	DFT · PBE

N entriesMultiple entries per property — large groups are collapsed; click a summary row to expand. Use filters above to narrow by form, heat treatment, basis, or test environment.

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Property	Value	Unit	Conditions	Source
Thermal Conductivity(k)	104	W/(m·K)	Measured

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Property	Value	Unit	Conditions	Source
Density(ρ)	3.258	kg/m³	DFT · OptB88vdW

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Method

Carrier

Property	Value	Unit	Conditions	Source
Band Gap(Eg)4 entries	2.740	eV	Measured
↳	2.770	eV	Measured
↳	1.482	eV	DFT · OptB88vdW
↳	2.373	eV	DFT · TBmBJ
Dielectric Constant (Relative Permittivity)(εr)3 entries	16.62	-	DFT · OptB88vdW
↳	12.51	-	DFT · PBE
↳	12.27 range 11.24–13.30median of 2 measurements	-	DFT · PBEsol
High-Frequency Dielectric Constant (ε∞)(ε∞)2 entries	11.60	-	DFT · OptB88vdW
↳	8.338	-	DFT · TBmBJ
Electronic Dielectric Tensor(ε∞)	Matrix (redacted)	-	DFT · PBE
Total Dielectric Tensor(ε)	Matrix (redacted)	-	DFT · PBE
Electron Effective Mass(m*e)	0.1900	me	DFT · OptB88vdW · 27°C
Hole Effective Mass(m*h)	0.5700	me	DFT · OptB88vdW · 27°C
Magnetic Moment(μB)	0.000	µB	DFT · OptB88vdW
Piezoelectric Modulus(eij)2 entries	0.000	C/m²	DFT · OptB88vdW
↳	0.1178	C/m²	DFT · PBE
Piezoelectric Stress Tensor(eij)	Matrix (redacted)	C/m²	DFT · PBE
Thermoelectric Power Factor(PF)2 entries	0.00580	W/(m·K²)	DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C
↳	0.00353	W/(m·K²)	DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C
Seebeck Coefficient(S)2 entries	-219.9	μV/K	DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C
↳	250.8	μV/K	DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C
Spectroscopic Limited Maximum Efficiency (SLME)(SLME)	15.10	%	DFT · TBmBJ

N entriesMultiple entries per property — large groups are collapsed; click a summary row to expand. Use filters above to narrow by form, heat treatment, basis, or test environment.

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Method

Property	Value	Unit	Conditions	Source
Energy Above Hull(ΔEhull)	0.4557	eV/atom	DFT · OptB88vdW
Formation Energy(ΔHf)2 entries	0.02467	eV/atom	DFT · OptB88vdW
↳	-0.5312	eV/atom	Measured

N entriesMultiple entries per property — large groups are collapsed; click a summary row to expand. Use filters above to narrow by form, heat treatment, basis, or test environment.

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Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.