GaP
semiconductor· GaP
Gallium phosphide (GaP) is a III-V compound semiconductor with a direct bandgap, commonly used in optoelectronic and high-frequency electronic devices. It is valued in applications requiring visible light emission, particularly red and yellow LEDs, as well as in integrated circuits and photodetectors where its wide bandgap and thermal stability offer advantages over silicon at elevated temperatures and high power densities. Engineers select GaP when direct optical emission in the visible spectrum is needed, or when operating conditions demand superior temperature performance and radiation hardness compared to conventional semiconductors.
Red and yellow LEDsVisible light optoelectronicsHigh-temperature electronicsIntegrated circuits (GaP substrates)Photodetectors and solar cellsRadiation-hardened devices
Compliance & Regulations
?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K)3 entries | 11,050 | ksi | — | ||
| ↳ | 11,050 | ksi | — | ||
| ↳ | 6,705.1 | ksi | — | ||
Elastic Compliance Tensor(Sij) | Matrix (redacted) | 1/GPa | — | ||
Elastic Anisotropy(AU) | 0.3980 | - | — | ||
Elastic Stiffness Tensor(Cij) | Matrix (redacted) | ksi | — | ||
Poisson's Ratio(ν)2 entries | 0.2230 | - | — | ||
| ↳ | -0.1100 | - | — | ||
Shear Modulus(G)3 entries | 7,509.4 | ksi | — | ||
| ↳ | 7,509.4 | ksi | — | ||
| ↳ | 2,538.2 | ksi | — |
N entriesMultiple entries per property — large groups are collapsed; click a summary row to expand. Use filters above to narrow by form / heat treatment / basis.
Verified Unverified Low confidence (<80%) Link to source
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Thermal Conductivity(k) | 60.09 | BTU/(hr·ft·°F) | — |
Verified Unverified Low confidence (<80%) Link to source
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.1177 | lb/in³ | — |
Verified Unverified Low confidence (<80%) Link to source
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)3 entries | 2.770 | eV | — | ||
| ↳ | 2.740 | eV | — | ||
| ↳ | 1.155 | eV | — | ||
Dielectric Constant (Relative Permittivity)(εr)3 entries | 12.51 | - | — | ||
| ↳ | 16.62 | - | — | ||
| ↳ | 12.27 range 11.24–13.30median of 2 measurements | - | — | ||
Electronic Dielectric Tensor(ε∞) | Matrix (redacted) | - | — | ||
Total Dielectric Tensor(ε) | Matrix (redacted) | - | — | ||
Magnetic Moment(μB) | 0.000 | µB | — | ||
Piezoelectric Modulus(eij)2 entries | 0.1178 | C/m² | — | ||
| ↳ | 0.000 | C/m² | — | ||
Piezoelectric Stress Tensor(eij) | Matrix (redacted) | C/m² | — | ||
Seebeck Coefficient(S) | -325.3 | µV/K | — |
N entriesMultiple entries per property — large groups are collapsed; click a summary row to expand. Use filters above to narrow by form / heat treatment / basis.
Verified Unverified Low confidence (<80%) Link to source
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.4557 | eV/atom | — | ||
Formation Energy(ΔHf)2 entries | -0.5312 | eV/atom | — | ||
| ↳ | 0.02467 | eV/atom | — |
N entriesMultiple entries per property — large groups are collapsed; click a summary row to expand. Use filters above to narrow by form / heat treatment / basis.
Verified Unverified Low confidence (<80%) Link to source
Regulatory Screening
Environmental
Export Control
RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.