GaP

Gallium phosphide (GaP) is a III-V compound semiconductor with a direct bandgap, commonly used in optoelectronic and high-frequency electronic devices. It is valued in applications requiring visible light emission, particularly red and yellow LEDs, as well as in integrated circuits and photodetectors where its wide bandgap and thermal stability offer advantages over silicon at elevated temperatures and high power densities. Engineers select GaP when direct optical emission in the visible spectrum is needed, or when operating conditions demand superior temperature performance and radiation hardness compared to conventional semiconductors.