Gallium oxide (Ga₂O₃) is an emerging wide-bandgap ceramic semiconductor material that belongs to the family of transparent conducting oxides and high-power electronic materials. Currently in advanced research and early commercialization phases, it is being developed as a next-generation alternative to silicon carbide and gallium nitride for high-temperature, high-voltage power electronics and RF applications. Engineers consider Ga₂O₃ for applications demanding superior voltage breakdown capability and thermal stability beyond conventional semiconductors, though material processing and device integration remain active areas of development.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 69.32 | GPa | DFT · OptB88vdW | ||
Poisson's Ratio(ν) | 0.4000 | - | DFT · OptB88vdW | ||
Shear Modulus(G) | 11.53 | GPa | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 4.412 | kg/m³ | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 0.000 | eV | DFT · OptB88vdW | ||
| ↳ | 0.000 | eV | DFT · TBmBJ | ||
Magnetic Moment(μB) | 0.000 | µB | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.6276 | eV/atom | DFT · OptB88vdW | ||
Formation Energy(ΔHf) | -1.040 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data