Gallium oxide (Ga₂O₃) is an emerging wide-bandgap ceramic semiconductor material that belongs to the family of transparent conducting oxides and high-power electronic materials. Currently in advanced research and early commercialization phases, it is being developed as a next-generation alternative to silicon carbide and gallium nitride for high-temperature, high-voltage power electronics and RF applications. Engineers consider Ga₂O₃ for applications demanding superior voltage breakdown capability and thermal stability beyond conventional semiconductors, though material processing and device integration remain active areas of development.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 10,054 | ksi | — | ||
Poisson's Ratio(ν) | 0.4000 | - | — | ||
Shear Modulus(G) | 1,672.3 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.1594 | lb/in³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | — | ||
Magnetic Moment(μB) | 0.000 | µB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.6276 | eV/atom | — | ||
Formation Energy(ΔHf) | -1.040 | eV/atom | — |